【学术视频】燕赵物理发展论坛 | 燕山大学刘永教授

• V atoms prefer to substitute the Ga atoms of Gasb.

  The Sb-rich growth condition is desirable for V substitution.

  The diffusion of V is through the interstitial sites.

• an antiferromagnetic-to-ferromagnetic phase transition occurs in V_xGa_1-xSb compounds at hig V content, due to enhanced superexchange interaction between e_g and t_2g states of neighboring V atoms

• Zinc-blende VSb, as well as its analogs VP and VAs, are intrinsic FM semiconductors. Meanwhile, they have a large change of absorption ability at the Curie point, due to a semiconductors-to-metal transition.

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